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2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm)
4.5+0.2 -0.1 1.60.1 1.50.1
+0.5 4.0-0.3 2.5+0.2 -0.1
0.50.1
(1)
(2)
(3) 0.40.1 1.50.1
1.00.3
0.4+0.1 -0.05
0.40.1 1.50.1
0.50.1 3.00.2
ROHM : MPT3 E I A J : SC-62
Abbreviated symbol : KE
(1) Gate (2) Drain (3) Source
!Absolute maximum ratings (Ta = 25C)
Parameter Drain-source voltage Gate-source voltage Continuous Drain current Reverse drain current Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP1 IDR IDRP1 PD Tch Tstg Limits 60 20 2 8 2 8 0.5 22 150 -55+150 Unit V V A A A A W C C
!Internal equivalent circuit
Drain
Gate
Total power dissipation(Tc=25C) Channel temperature Storage temperature
Gate Protection Diode
Source
1 Pw 10s, Duty cycle 1% 2 When mounted on a 40 x 40 x 0.7 mm alumina board.
A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.
!Electrical characteristics (Ta = 25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf Min. - 60 - 0.8 - - 1.5 - - - - - - - Typ. - - - - 0.25 0.35 - 160 85 25 20 50 120 70 Max. 10 - 10 1.5 0.32 0.45 - - - - - - - - Unit A V A V S pF pF pF ns ns ns ns Test Conditions VGS = 20V, VDS = 0V ID = 1mA, VGS = 0V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA ID = 1A, VGS = 4V ID = 1A, VGS = 2.5V ID = 1A, VDS = 10V VDS = 10V VGS = 0V f = 1MHz ID = 1A, VDD VGS = 4V RL = 30 RG = 10 30V
Pw 300s, Duty cycle 1%
2SK3065
Transistors
!Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SK3065 Taping T100 1000
!Electrical characteristic curves
3
TOTAL POWER DISSIPATION : PD(W)
10
DRAIN CURRENT : ID(A)
1
Pw=10ms
2
DRAIN CURRENT : ID(A)
When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board.
Operating in this area is limited by RDS(on)
100s 1ms
2 4V 3.5V 3V 2.5V
Ta=25C Pulsed
2V 1
0.1
DC OPERATION
1
0.01
Ta=25C Single Pulsed
VGS=1.5V 10 100 0 0 5
DRAIN-SOURCE VOLTAGE : VDS(V)
0 0
25
50
75
100
125
150
175
0.001 0.1
1
10
AMBIENT TEMPERATURE : Ta(C)
DRAIN-SOURCE VOLTAGE : VDS(V)
Fig.1
Total Power Dissipation vs. Case Temperature
Fig.2 Maximum Safe Operating Area
Fig.3
Typical Output Characteristics
GATE THRESHOLD VOLTAGE : VGS(th)(V)
10
3
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)()
VDS=10V Pulsed
4
VDS=10V
10
VGS=4V Pulsed
DRAIN CURRENT : ID(A)
1
Ta=-25C 25C 75C 125C
2 10mA 1 ID=1mA
1
Ta=125C 75C 25C -25C
0.1 0
1
2
3
4
5
0 -50 -25
0
25
50
75
100
125
150
0.1 0.01
0.1
1
10
GATE THRESHOLD VOLTAGE : VGS(th)(V)
CHANNEL TEMPERATURE : Tch(C)
DRAIN CURRENT : ID(A)
Fig.4 Typical Transfer Characteristics
Fig.5
Gate Threshold Voltage vs. Channel Temperature
Fig.6 Static Drain-Source OnState Resistance vs. Drain Current()
2SK3065
Transistors
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)() STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)()
0.75 2A 0.5 ID=1A
1
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)()
VGS=2.5V Pulsed
1
Ta=25C Pulsed
1
VGS=4V Pulsed
0.5 2A
0.25
ID=1A 0 -50 -25
0.1 0.01
0.1
1
10
0 0
5
10
15
20
0
25
50
75
100
125
150
DRAIN CURRENT : ID(A)
GATE-SOURCE VOLTAGE : VGS(V)
CHANNEL TEMPERATURE : Tch(C)
Fig.7
Static Drain-Source OnState Resistance vs. Drain Current()
Fig.8
Static Drain-Source OnState Resistance vs. Gate-Source Voltage
Fig.9
Static Drain-Source OnState Resistance vs. Channel Temperature
FORWARD TRANSFER ADMITTANCE : | Yfs |(S)
10
REVERSE DRAIN CURRENT : IDR(A)
Ta=-25C 25C 125C 1 75C
REVERSE DRAIN CURRENT : IDR(A)
VDS=10V Pulsed
10
VGS=4V Pulsed
10
Ta=25C Pulsed
4V 1 VGS=0V
1 Ta=125C 75C 25C -25C
0.1
0.1
0.1 0.01
0.1
1
10
0.01 0
0.4
0.8
1.2
1.6
0.01 0
0.4
0.8
1.2
1.6
DRAIN CURRENT : ID(A)
SOURCE-DRAIN VOLTAGE : VSD(V)
SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.10
Forward Trasfer Admitance vs. Drain Current
Fig.11
Reverse Drain Current vs. Source-Drain Voltage()
Fig.12
Reverse Drain Current vs. Source-Drain Voltage()
1000
CAPACITANCE : C(pF)
Ciss 100 Coss
td(off)
100
tf tr td(on)
REVERSE RECOVERY TIME : trr(ns)
VGS=0V f=1MHZ Ta=25C
SWITCHING TIME : t(ns)
1000
VDD 30V VGS=4V RG=10 Ta=25C Pulsed
1000
di/dt=50A/s VGS=0V Ta=25C Pulsed
100
10
Crss
1 0
10
DRAIN-SOURCE VOLTAGE : VSD(V)
100
10 0.1
1
DRAIN CURRENT : ID(A)
10
10 0.1
1
REVERSE DRAIN CURRENT : IDR(A)
10
Fig.13
Typical Capacitance vs. Drain-Source Voltage
Fig.14
Switching Characteristics
Fig.15
(a measurement circuit diagram Fig.17 , it refers 18 times)
Reverse Recovery Time vs. Reverse Drain Current
2SK3065
Transistors
10
NORMALIZED TRANSIENT THERMAL RESISTANCE : r(t)
1
D=1 0.5
0.2 0.1 0.1 0.05 0.02 0.01
When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board.
Ta=25C th (ch-c) (t) = r (t) * th (ch-c) th (ch-c) =62.5C/W PW T D= PW T
0.01 Single pulse
0.001 100
1m
10m
100m
PULSE WIDTH : PW(s)
1
10
100
Fig.16
Normarized Transient Thermal Resistance vs. Pulse Width
!Switching characteristics measurement circuit
Pulse width 50% 10% 10% 90% 50%
VGS
ID D.U.T. RL
VDS
VGS VDS
RG
10% 90% 90%
td(off) tf toff
VDD
td(on) ton tr
Fig.17 Switching Time Test Circuit
Fig.18 Switching Time Waveforms

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